Analysis of Power Transmission Efficiency by Etching Depth Perturbation in a Linear Negative Tapered Silicon-on-Insulator Bragg Grating Coupler with Variable Coupling Coefficient
Q. Tao, F-G. Luo, Q-L. Liang, Z-W. Wan, X-M. Song and X-C. Liu
In this paper we analyse the influence of power transmission efficiency of an optical pulse by grating etching depth perturbation in the core of a linear negative tapered silicon-on-insulator (SOI) Bragg grating coupler (LNTSBGDC) with variable coupling coefficient. It was found that all the power transmission efficiencies, Δ, were affected when ΔD ≠ 0, when ΔD ∈ [-5nm, 3nm] and when Δ was below 0.02 for a Gaussian coupling coefficient, an exponential coupling coefficient and a raised cosine coupling coefficient. However, it is easier to actually fabricate a LNTSBGDC in the error range of ΔD ∈ [-5nm, 3nm].
Keywords: Silicon-on-insulator (SOI), linear negative tapered silicon-on-insulator Bragg grating coupler (LNTSBGDC), optical pulse, coupled nonlinear Schrödinger equations (CNLSE), power transmission efficiency