Reliability and Performance Investigations of a Novel Enhancement Mode p-GaN HEMT
Arihant Raj Siddharth, Urvashi and Gargi Khanna
This paper aims at fulfilling the large current requirements of power devices and hence a novel p-GaN HEMT on Silicon Carbide(SiC) substrate is proposed. The proposed structure generates a drain current of 0.091A and an output power of 0.91W at a gate bias of 10V and a drain bias of 5V. The impact of change in aluminum composition in the AlGaN (Aluminum Gallium Nitride) barrier layer on the current-voltage characteristics of the device has also been studied in this paper and at the composition of 0.07 it depicts characteristics well suited for fast switching operation as the ION/IOFF ratio of the device at this particular concentration is observed to be of the order of 1012. A study has also been done on the concentration of carriers in the GaN (Gallium Nitride) channel of the device. The maximum temperature attained by the device at a VDS=4V is 31.61°C. Keeping the same drain bias and after setting the aluminum composition in the AlGaN barrier as 0.07, the overall device temperature reduced to 26.99°C.
Keywords: HEMT (High Electron Mobility Transistor), SiC (Silicon Carbide), AlGaN (Aluminium Gallium Nitride), GaN (Gallium Nitride), Modulation Doped Field Effect Transistor (MODFET)