Investigating Threshold Voltage Roll-off in Submicron DG MOSFET Incorporating Effect of Flatband Voltage
Arpan Deyasi, Dipanjan Kar, Shrestha Bagui, Madhurima Ghosh and Pampa Debnath
Threshold voltage roll-off for asymmetrically doped submicron double-gate MOSFET with independent gate configuration is analytically investigated following Ortiz-Conde model. The analysis is based on computation of surface potential considering the constant center potential at the mid-point under inversion condition, where high-low doping profile is considered for solution of Poisson’s equation. Flatband voltage, substrate bias and dielectric parameters are incorporated in the proposed model in presence of both high-K and low-K dielectrics. Practical doping concentration is considered for simulation instead of ideal undoped channel approximation, and results significantly establish the role of flatband in determining electrical characteristics. Magnitude of voltage shift establishes supremacy of the present model compared to the previous results computed under identical parametric and external conditions, which speaks novelty of the present work.
Keywords: Threshold voltage roll-off, IG-DG MOSFET, asymmetric doping profile, flatband voltage, Ortiz-Conde model