Performance Improvement of CISSe Solar Cell Through CuI Back Layer and Optimized Device Structure
Arpan Deyasi, Subhadeep Chakrabarti, Pushpa Bharti, Kiran Majee, Sumit Roy and Angsuman Sarkar
A novel structural modification is proposed in this paper by incorporating Copper Iodide (CuI) back contact in conventional Copper Indium Sulphoselenide [CISSe] with shallow acceptor density and optimized layer dimensions. 34.72% improvement of conversion efficiency and 16.41% enhancement of fill factor are computed with 1000 nm overall device thickness, when computer for 2×1025 m-3 acceptor concentration. Poisson’s equation and continuity equations are simultaneously solved with appropriate boundary conditions, where diffusion current densities are considered incorporating Seebeck coefficients. With help of SCAPS-1D software, open circuit voltage, short circuit current density, fill factor, conversion efficiency and recombination current density are computed. Noticeable performance enhancement makes it a promising candidate in the perovskite solar cell family.
Keywords: Conversion efficiency, fill factor, shallow acceptor density, back contact, perovskite solar cell